FRANCISCO JESÚS
GÁMIZ PÉREZ
CATEDRÁTICO DE UNIVERSIDAD
JUAN ANTONIO
LÓPEZ VILLANUEVA
CATEDRÁTICO DE UNIVERSIDAD
Publicaciones en las que colabora con JUAN ANTONIO LÓPEZ VILLANUEVA (61)
2002
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Direct and trap-assisted elastic tunneling through ultrathin gate oxides
Journal of Applied Physics, Vol. 91, Núm. 8, pp. 5116-5124
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Monte Carlo simulation of electron mobility in silicon-on-insulator structures
Solid-State Electronics
2001
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A simple subthreshold swing model for short channel MOSFETs
Solid-State Electronics, Vol. 45, Núm. 3, pp. 391-397
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Electron transport in silicon-on-insulator devices
Solid-State Electronics, Vol. 45, Núm. 4, pp. 613-620
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Electron transport in ultrathin double-gate SOI devices
Microelectronic Engineering
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Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures
Journal of Applied Physics, Vol. 90, Núm. 7, pp. 3396-3404
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Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers
Journal of Applied Physics, Vol. 89, Núm. 3, pp. 1764-1770
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Solid-State Electronics: Foreword
Solid-State Electronics, Vol. 45, Núm. 4, pp. 539
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Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling
IEEE Transactions on Electron Devices, Vol. 48, Núm. 10, pp. 2447-2449
2000
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Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects
IEEE Electron Device Letters, Vol. 21, Núm. 5, pp. 239-241
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Effects of the inversion-layer centroid on the performance of double-gate MOSFET's
IEEE Transactions on Electron Devices, Vol. 47, Núm. 1, pp. 141-146
1999
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Computational study of the strained-Si MOSFET: A possible alternative for the next century electronics industry
Computer Physics Communications, Vol. 121, pp. 547-549
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Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers
Journal of Applied Physics, Vol. 86, Núm. 11, pp. 6269-6275
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Surface roughness at the Si-SiO2 interfaces in fully depleted silicon-on-insulator inversion layers
Journal of Applied Physics, Vol. 86, Núm. 12, pp. 6854-6863
1998
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A model for the drain current of deep submicrometer MOSFET's including electron-velocity overshoot
IEEE Transactions on Electron Devices, Vol. 45, Núm. 10, pp. 2249-2251
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A β-SiC MOSFET Monte Carlo simulator including inversion layer quantization
VLSI Design, Vol. 8, Núm. 1-4, pp. 257-260
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An analytical model for the electron velocity overshoot effects in strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs
IEEE Transactions on Electron Devices, Vol. 45, Núm. 4, pp. 993-995
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Development of a method for determining the dependence of the electron mobility on the longitudinal-electric field in MOSFETs
VLSI Design, Vol. 8, Núm. 1-4, pp. 261-264
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Electron mobility in quantized β-SiC inversion layers
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, Núm. 3, pp. 1631-1633
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I-V and small signal parameters modelling of ultrasubmicron MOSFETs including the significant electron-velocity overshoot effects, which are enhanced at low temperature
Journal De Physique. IV : JP, Vol. 8, Núm. 3