Publicaciones en las que colabora con PEDRO CARTUJO ESTÉBANEZ (19)

2005

  1. Monte Carlo simulation of velocity modulation transistors

    2005 Spanish Conference on Electron Devices, Proceedings

2004

  1. Double gate silicon on insulator transistors. A Monte Carlo study

    Solid-State Electronics, Vol. 48, Núm. 6, pp. 937-945

2003

  1. Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs

    Semiconductor Science and Technology, Vol. 18, Núm. 11, pp. 927-937

  2. Monte Carlo simulation of remote-coulomb-scattering-limited mobility in metal-oxide-semiconductor transistors

    Applied Physics Letters, Vol. 82, Núm. 19, pp. 3251-3253

  3. Strained-Si on Si1-xGex MOSFET mobility model

    IEEE Transactions on Electron Devices, Vol. 50, Núm. 5, pp. 1408-1411

2001

  1. Electron transport in silicon-on-insulator devices

    Solid-State Electronics, Vol. 45, Núm. 4, pp. 613-620

  2. Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers

    Journal of Applied Physics, Vol. 89, Núm. 3, pp. 1764-1770

  3. Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling

    IEEE Transactions on Electron Devices, Vol. 48, Núm. 10, pp. 2447-2449

1999

  1. Computational study of the strained-Si MOSFET: A possible alternative for the next century electronics industry

    Computer Physics Communications, Vol. 121, pp. 547-549

1998

  1. A model for the drain current of deep submicrometer MOSFET's including electron-velocity overshoot

    IEEE Transactions on Electron Devices, Vol. 45, Núm. 10, pp. 2249-2251

  2. Electron mobility in quantized β-SiC inversion layers

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, Núm. 3, pp. 1631-1633

  3. Monte carlo simulation of electron transport properties in extremely thin SOI MOSFET's

    IEEE Transactions on Electron Devices, Vol. 45, Núm. 5, pp. 1122-1126

  4. Two-dimensional drift-diffusion simulation of superficial strained-Si/Si1-xGex channel metal-oxide-semiconductor field-effect transistors

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, Núm. 3, pp. 1538-1540

1997

  1. Electron transport properties of quantized silicon carbide inversion layers

    Journal of Electronic Materials, Vol. 26, Núm. 3, pp. 203-207

  2. Study of the effects of a stepped doping profile in short-channel mosfet's

    IEEE Transactions on Electron Devices, Vol. 44, Núm. 9, pp. 1425-1431

  3. The dependence of the electron mobility on the longitudinal electric field in MOSFETs

    Semiconductor Science and Technology, Vol. 12, Núm. 3, pp. 321-330

1996

  1. Coulomb scattering in strained-silicon inversion layers on Si1-xGex substrates

    Applied Physics Letters, Vol. 69, Núm. 6, pp. 797-799

  2. Electron velocity overshoot in strained Si/Si1-xGexMOSFETs

    European Solid-State Device Research Conference

  3. Strained Si/SiGe heterostructures at low temperatures. A Monte Carlo study

    Journal De Physique. IV : JP, Vol. 6, Núm. 3, pp. 87-92