PEDRO
CARTUJO ESTÉBANEZ
Forscher in der Zeit 2008-2009
JUAN ANTONIO
LÓPEZ VILLANUEVA
CATEDRÁTICO DE UNIVERSIDAD
Publikationen, an denen er mitarbeitet JUAN ANTONIO LÓPEZ VILLANUEVA (27)
2002
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Direct and trap-assisted elastic tunneling through ultrathin gate oxides
Journal of Applied Physics, Vol. 91, Núm. 8, pp. 5116-5124
2001
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Electron transport in silicon-on-insulator devices
Solid-State Electronics, Vol. 45, Núm. 4, pp. 613-620
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Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers
Journal of Applied Physics, Vol. 89, Núm. 3, pp. 1764-1770
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Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling
IEEE Transactions on Electron Devices, Vol. 48, Núm. 10, pp. 2447-2449
2000
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Semiempirical closed-form models for the inversion-layer centroid of a p-MOS including quantum effects
Semiconductor Science and Technology, Vol. 15, Núm. 2, pp. 85-90
1999
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Computational study of the strained-Si MOSFET: A possible alternative for the next century electronics industry
Computer Physics Communications, Vol. 121, pp. 547-549
1998
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A model for the drain current of deep submicrometer MOSFET's including electron-velocity overshoot
IEEE Transactions on Electron Devices, Vol. 45, Núm. 10, pp. 2249-2251
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Electron mobility in quantized β-SiC inversion layers
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, Núm. 3, pp. 1631-1633
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Monte carlo simulation of electron transport properties in extremely thin SOI MOSFET's
IEEE Transactions on Electron Devices, Vol. 45, Núm. 5, pp. 1122-1126
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Two-dimensional drift-diffusion simulation of superficial strained-Si/Si1-xGex channel metal-oxide-semiconductor field-effect transistors
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, Núm. 3, pp. 1538-1540
1997
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Electron transport properties of quantized silicon carbide inversion layers
Journal of Electronic Materials, Vol. 26, Núm. 3, pp. 203-207
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Study of the effects of a stepped doping profile in short-channel mosfet's
IEEE Transactions on Electron Devices, Vol. 44, Núm. 9, pp. 1425-1431
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The dependence of the electron mobility on the longitudinal electric field in MOSFETs
Semiconductor Science and Technology, Vol. 12, Núm. 3, pp. 321-330
1996
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Coulomb scattering in strained-silicon inversion layers on Si1-xGex substrates
Applied Physics Letters, Vol. 69, Núm. 6, pp. 797-799
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Electron velocity overshoot in strained Si/Si1-xGexMOSFETs
European Solid-State Device Research Conference
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Strained Si/SiGe heterostructures at low temperatures. A Monte Carlo study
Journal De Physique. IV : JP, Vol. 6, Núm. 3, pp. 87-92
1995
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Universality of electron mobility curves in MOSFETs: a Monte Carlo study
IEEE Transactions on Electron Devices, Vol. 42, Núm. 2, pp. 258-265
1994
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Effects of oxide-charge space correlation on electron mobility in inversion layers
Semiconductor Science and Technology, Vol. 9, Núm. 5, pp. 1102-1107
1993
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An analytical expression for phonon-limited electron mobility in silicon-inversion layers
Journal of Applied Physics, Vol. 74, Núm. 5, pp. 3289-3292
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Influence of the interface-state density on the electron mobility in silicon inversion layers
Journal of Electronic Materials, Vol. 22, Núm. 9, pp. 1159-1163