Publicaciones en colaboración con investigadores/as de Interuniversity Microelectronics Centre (17)

2022

  1. Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching

    Advanced Electronic Materials, Vol. 8, Núm. 8

2021

  1. Advanced Data Encryption ​using 2D Materials

    Advanced Materials, Vol. 33, Núm. 27

  2. Standards for the Characterization of Endurance in Resistive Switching Devices

    ACS Nano, Vol. 15, Núm. 11, pp. 17214-17231

  3. Time series modeling of the cycle-to-cycle variability in h-BN based memristors

    IEEE International Reliability Physics Symposium Proceedings

2020

  1. Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks

    IEEE International Reliability Physics Symposium Proceedings

  2. Reversible dielectric breakdown in h-BN stacks: A statistical study of the switching voltages

    IEEE International Reliability Physics Symposium Proceedings

2019

  1. Recommended Methods to Study Resistive Switching Devices

    Advanced Electronic Materials, Vol. 5, Núm. 1

2013

  1. Lessons learned from low-frequency noise studies on fully depleted UTBOX silicon-on-insulator nMOSFETs

    ECS Transactions

  2. Low-frequency noise studies on fully depleted UTBOX silicon-on-insulator nMOSFETs: Challenges and opportunities

    ECS Journal of Solid State Science and Technology, Vol. 2, Núm. 11

  3. Reliability insights into low frequency noise in high-mobility transistors

    Solid State Technology, Vol. 56, Núm. 2, pp. 25-28

2012

  1. Dependence of generation-recombination noise with gate voltage in FD SOI MOSFETs

    IEEE Transactions on Electron Devices, Vol. 59, Núm. 10, pp. 2780-2786

  2. Insights in low frequency noise of advanced and high-mobility channel transistors

    Technical Digest - International Electron Devices Meeting, IEDM

  3. On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs

    European Solid-State Device Research Conference

2011

  1. Ge content and recess depth dependence of the band-to-band tunneling current in Si1-xGex/Si hetero-junctions

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

  2. High doping density/high electric field, stress and heterojunction effects on the characteristics of CMOS compatible p-n junctions

    Journal of the Electrochemical Society, Vol. 158, Núm. 5

  3. Impact of Ge content and recess depth on the leakage current in strained Si1-xGex/Si heterojunctions

    IEEE Transactions on Electron Devices, Vol. 58, Núm. 8, pp. 2362-2370

2010

  1. Modeling impact of electric field and strain on the leakage of embedded SiGe source/drain junctions

    2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010