Publicaciones en las que colabora con JUAN ANTONIO LÓPEZ VILLANUEVA (41)

2002

  1. Direct and trap-assisted elastic tunneling through ultrathin gate oxides

    Journal of Applied Physics, Vol. 91, Núm. 8, pp. 5116-5124

  2. Monte Carlo simulation of electron mobility in silicon-on-insulator structures

    Solid-State Electronics

2001

  1. Electron transport in silicon-on-insulator devices

    Solid-State Electronics, Vol. 45, Núm. 4, pp. 613-620

  2. Electron transport in ultrathin double-gate SOI devices

    Microelectronic Engineering

  3. Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures

    Journal of Applied Physics, Vol. 90, Núm. 7, pp. 3396-3404

  4. Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers

    Journal of Applied Physics, Vol. 89, Núm. 3, pp. 1764-1770

  5. Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling

    IEEE Transactions on Electron Devices, Vol. 48, Núm. 10, pp. 2447-2449

2000

  1. Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects

    IEEE Electron Device Letters, Vol. 21, Núm. 5, pp. 239-241

  2. Effects of the inversion-layer centroid on the performance of double-gate MOSFET's

    IEEE Transactions on Electron Devices, Vol. 47, Núm. 1, pp. 141-146

1999

  1. Computational study of the strained-Si MOSFET: A possible alternative for the next century electronics industry

    Computer Physics Communications, Vol. 121, pp. 547-549

  2. Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers

    Journal of Applied Physics, Vol. 86, Núm. 11, pp. 6269-6275

  3. Experimental determination of the effective mobility in NMOSFETs: a comparative study

    Solid-State Electronics, Vol. 43, Núm. 4, pp. 701-707

  4. Surface roughness at the Si-SiO2 interfaces in fully depleted silicon-on-insulator inversion layers

    Journal of Applied Physics, Vol. 86, Núm. 12, pp. 6854-6863

1998

  1. A model for the drain current of deep submicrometer MOSFET's including electron-velocity overshoot

    IEEE Transactions on Electron Devices, Vol. 45, Núm. 10, pp. 2249-2251

  2. A β-SiC MOSFET Monte Carlo simulator including inversion layer quantization

    VLSI Design, Vol. 8, Núm. 1-4, pp. 257-260

  3. An analytical model for the electron velocity overshoot effects in strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs

    IEEE Transactions on Electron Devices, Vol. 45, Núm. 4, pp. 993-995

  4. Development of a method for determining the dependence of the electron mobility on the longitudinal-electric field in MOSFETs

    VLSI Design, Vol. 8, Núm. 1-4, pp. 261-264

  5. Electron mobility in quantized β-SiC inversion layers

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, Núm. 3, pp. 1631-1633

  6. I-V and small signal parameters modelling of ultrasubmicron MOSFETs including the significant electron-velocity overshoot effects, which are enhanced at low temperature

    Journal De Physique. IV : JP, Vol. 8, Núm. 3

  7. Low temperature mobility improvement in high-mobility strained-Si/Si1-xGex multilayer MOSFETs

    Journal De Physique. IV : JP, Vol. 8, Núm. 3