JUAN BAUTISTA
ROLDÁN ARANDA
CATEDRÁTICO DE UNIVERSIDAD
ANDRÉS
GODOY MEDINA
CATEDRÁTICO DE UNIVERSIDAD
Publications dans lesquelles il/elle collabore avec ANDRÉS GODOY MEDINA (20)
2019
2011
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An inversion-charge analytical model for square gate-all-around MOSFETs
IEEE Transactions on Electron Devices, Vol. 58, Núm. 9, pp. 2854-2861
2010
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An analytical I-V model for surrounding-gate transistors that includes quantum and velocity overshoot effects
IEEE Transactions on Electron Devices, Vol. 57, Núm. 11, pp. 2925-2933
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An analytical model for square GAA MOSFETs including quantum effects
Solid-State Electronics, Vol. 54, Núm. 11, pp. 1463-1469
2009
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A new inversion charge centroid model for surrounding gate transistors with HfO2 as gate insulator
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
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Monte Carlo simulation of nanoelectronic devices
Journal of Computational Electronics, Vol. 8, Núm. 3-4, pp. 174-191
2008
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Modeling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs, including quantum effects
IEEE Transactions on Electron Devices, Vol. 55, Núm. 1, pp. 411-416
2006
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Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility
Journal of Applied Physics, Vol. 100, Núm. 1
2005
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Double gate silicon-on-insulator transistors: N+-n+ gate versus n+-p+ gate configuration
2005 Spanish Conference on Electron Devices, Proceedings
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Electron transport in silicon inversion slabs of nanometric thickness
Proceedings of SPIE - The International Society for Optical Engineering
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Influence of confined acoustic phonons on the electron mobility in ultrathin silicon-on-insulator layers
Proceedings - Electrochemical Society
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Monte Carlo simulation of velocity modulation transistors
2005 Spanish Conference on Electron Devices, Proceedings
2004
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Double gate silicon on insulator transistors. A Monte Carlo study
Solid-State Electronics, Vol. 48, Núm. 6, pp. 937-945
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Double gate silicon-on-insulator transistors: N+-n+ gate versus n+-p+ gate configuration
ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference
2003
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A new remote Coulomb scattering model for ultrathin oxide MOSFETs
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs
Semiconductor Science and Technology, Vol. 18, Núm. 11, pp. 927-937
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Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration
Journal of Applied Physics, Vol. 94, Núm. 9, pp. 5732-5741
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Remote surface roughness scattering in ultrathin-oxide MOSFETs
European Solid-State Device Research Conference
2002
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Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility
Applied Physics Letters, Vol. 80, Núm. 22, pp. 4160-4162
2001
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Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling
IEEE Transactions on Electron Devices, Vol. 48, Núm. 10, pp. 2447-2449