Publicaciones en las que colabora con JUAN ANTONIO LÓPEZ VILLANUEVA (27)

2002

  1. Direct and trap-assisted elastic tunneling through ultrathin gate oxides

    Journal of Applied Physics, Vol. 91, Núm. 8, pp. 5116-5124

2001

  1. Electron transport in silicon-on-insulator devices

    Solid-State Electronics, Vol. 45, Núm. 4, pp. 613-620

  2. Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers

    Journal of Applied Physics, Vol. 89, Núm. 3, pp. 1764-1770

  3. Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling

    IEEE Transactions on Electron Devices, Vol. 48, Núm. 10, pp. 2447-2449

2000

  1. Semiempirical closed-form models for the inversion-layer centroid of a p-MOS including quantum effects

    Semiconductor Science and Technology, Vol. 15, Núm. 2, pp. 85-90

1999

  1. Computational study of the strained-Si MOSFET: A possible alternative for the next century electronics industry

    Computer Physics Communications, Vol. 121, pp. 547-549

1998

  1. A model for the drain current of deep submicrometer MOSFET's including electron-velocity overshoot

    IEEE Transactions on Electron Devices, Vol. 45, Núm. 10, pp. 2249-2251

  2. Electron mobility in quantized β-SiC inversion layers

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, Núm. 3, pp. 1631-1633

  3. Monte carlo simulation of electron transport properties in extremely thin SOI MOSFET's

    IEEE Transactions on Electron Devices, Vol. 45, Núm. 5, pp. 1122-1126

  4. Two-dimensional drift-diffusion simulation of superficial strained-Si/Si1-xGex channel metal-oxide-semiconductor field-effect transistors

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, Núm. 3, pp. 1538-1540

1997

  1. Electron transport properties of quantized silicon carbide inversion layers

    Journal of Electronic Materials, Vol. 26, Núm. 3, pp. 203-207

  2. Study of the effects of a stepped doping profile in short-channel mosfet's

    IEEE Transactions on Electron Devices, Vol. 44, Núm. 9, pp. 1425-1431

  3. The dependence of the electron mobility on the longitudinal electric field in MOSFETs

    Semiconductor Science and Technology, Vol. 12, Núm. 3, pp. 321-330

1996

  1. Coulomb scattering in strained-silicon inversion layers on Si1-xGex substrates

    Applied Physics Letters, Vol. 69, Núm. 6, pp. 797-799

  2. Electron velocity overshoot in strained Si/Si1-xGexMOSFETs

    European Solid-State Device Research Conference

  3. Strained Si/SiGe heterostructures at low temperatures. A Monte Carlo study

    Journal De Physique. IV : JP, Vol. 6, Núm. 3, pp. 87-92

1995

  1. Universality of electron mobility curves in MOSFETs: a Monte Carlo study

    IEEE Transactions on Electron Devices, Vol. 42, Núm. 2, pp. 258-265

1994

  1. Effects of oxide-charge space correlation on electron mobility in inversion layers

    Semiconductor Science and Technology, Vol. 9, Núm. 5, pp. 1102-1107

1993

  1. An analytical expression for phonon-limited electron mobility in silicon-inversion layers

    Journal of Applied Physics, Vol. 74, Núm. 5, pp. 3289-3292

  2. Influence of the interface-state density on the electron mobility in silicon inversion layers

    Journal of Electronic Materials, Vol. 22, Núm. 9, pp. 1159-1163