Publikationen, an denen er mitarbeitet JUAN ENRIQUE CARCELLER BELTRÁN (28)

2005

  1. Monte Carlo simulation of velocity modulation transistors

    2005 Spanish Conference on Electron Devices, Proceedings

2004

  1. Double gate silicon on insulator transistors. A Monte Carlo study

    Solid-State Electronics, Vol. 48, Núm. 6, pp. 937-945

2003

  1. Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs

    Semiconductor Science and Technology, Vol. 18, Núm. 11, pp. 927-937

  2. Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration

    Journal of Applied Physics, Vol. 94, Núm. 9, pp. 5732-5741

  3. Monte Carlo simulation of remote-coulomb-scattering-limited mobility in metal-oxide-semiconductor transistors

    Applied Physics Letters, Vol. 82, Núm. 19, pp. 3251-3253

  4. Strained-Si on Si1-xGex MOSFET mobility model

    IEEE Transactions on Electron Devices, Vol. 50, Núm. 5, pp. 1408-1411

2001

  1. Electron transport in silicon-on-insulator devices

    Solid-State Electronics, Vol. 45, Núm. 4, pp. 613-620

  2. Electron transport in ultrathin double-gate SOI devices

    Microelectronic Engineering

1999

  1. Computational study of the strained-Si MOSFET: A possible alternative for the next century electronics industry

    Computer Physics Communications, Vol. 121, pp. 547-549

  2. Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers

    Journal of Applied Physics, Vol. 86, Núm. 11, pp. 6269-6275

  3. Surface roughness at the Si-SiO2 interfaces in fully depleted silicon-on-insulator inversion layers

    Journal of Applied Physics, Vol. 86, Núm. 12, pp. 6854-6863

1998

  1. A model for the drain current of deep submicrometer MOSFET's including electron-velocity overshoot

    IEEE Transactions on Electron Devices, Vol. 45, Núm. 10, pp. 2249-2251

  2. An analytical model for the electron velocity overshoot effects in strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs

    IEEE Transactions on Electron Devices, Vol. 45, Núm. 4, pp. 993-995

  3. I-V and small signal parameters modelling of ultrasubmicron MOSFETs including the significant electron-velocity overshoot effects, which are enhanced at low temperature

    Journal De Physique. IV : JP, Vol. 8, Núm. 3

  4. Low temperature mobility improvement in high-mobility strained-Si/Si1-xGex multilayer MOSFETs

    Journal De Physique. IV : JP, Vol. 8, Núm. 3

  5. Monte Carlo simulation of a submicron MOSFET including inversion layer quantization

    VLSI Design, Vol. 6, Núm. 1-4, pp. 287-290

  6. Monte carlo simulation of electron transport properties in extremely thin SOI MOSFET's

    IEEE Transactions on Electron Devices, Vol. 45, Núm. 5, pp. 1122-1126

1997

  1. Modeling effects of electron-velocity overshoot in a MOSFET

    IEEE Transactions on Electron Devices, Vol. 44, Núm. 5, pp. 841-846

  2. Monte Carlo study on electron transport properties in double-gate fully depleted SOI-MOSFETs

    European Solid-State Device Research Conference

  3. Study of the effects of a stepped doping profile in short-channel mosfet's

    IEEE Transactions on Electron Devices, Vol. 44, Núm. 9, pp. 1425-1431