JUAN ENRIQUE CARCELLER BELTRÁN-rekin lankidetzan egindako argitalpenak (28)

2005

  1. Monte Carlo simulation of velocity modulation transistors

    2005 Spanish Conference on Electron Devices, Proceedings

2004

  1. Double gate silicon on insulator transistors. A Monte Carlo study

    Solid-State Electronics, Vol. 48, Núm. 6, pp. 937-945

2003

  1. Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs

    Semiconductor Science and Technology, Vol. 18, Núm. 11, pp. 927-937

  2. Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration

    Journal of Applied Physics, Vol. 94, Núm. 9, pp. 5732-5741

  3. Monte Carlo simulation of remote-coulomb-scattering-limited mobility in metal-oxide-semiconductor transistors

    Applied Physics Letters, Vol. 82, Núm. 19, pp. 3251-3253

  4. Strained-Si on Si1-xGex MOSFET mobility model

    IEEE Transactions on Electron Devices, Vol. 50, Núm. 5, pp. 1408-1411

2001

  1. Electron transport in silicon-on-insulator devices

    Solid-State Electronics, Vol. 45, Núm. 4, pp. 613-620

  2. Electron transport in ultrathin double-gate SOI devices

    Microelectronic Engineering

1999

  1. Computational study of the strained-Si MOSFET: A possible alternative for the next century electronics industry

    Computer Physics Communications, Vol. 121, pp. 547-549

  2. Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers

    Journal of Applied Physics, Vol. 86, Núm. 11, pp. 6269-6275

  3. Surface roughness at the Si-SiO2 interfaces in fully depleted silicon-on-insulator inversion layers

    Journal of Applied Physics, Vol. 86, Núm. 12, pp. 6854-6863

1998

  1. A model for the drain current of deep submicrometer MOSFET's including electron-velocity overshoot

    IEEE Transactions on Electron Devices, Vol. 45, Núm. 10, pp. 2249-2251

  2. An analytical model for the electron velocity overshoot effects in strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs

    IEEE Transactions on Electron Devices, Vol. 45, Núm. 4, pp. 993-995

  3. I-V and small signal parameters modelling of ultrasubmicron MOSFETs including the significant electron-velocity overshoot effects, which are enhanced at low temperature

    Journal De Physique. IV : JP, Vol. 8, Núm. 3

  4. Low temperature mobility improvement in high-mobility strained-Si/Si1-xGex multilayer MOSFETs

    Journal De Physique. IV : JP, Vol. 8, Núm. 3

  5. Monte Carlo simulation of a submicron MOSFET including inversion layer quantization

    VLSI Design, Vol. 6, Núm. 1-4, pp. 287-290

  6. Monte carlo simulation of electron transport properties in extremely thin SOI MOSFET's

    IEEE Transactions on Electron Devices, Vol. 45, Núm. 5, pp. 1122-1126

1997

  1. Modeling effects of electron-velocity overshoot in a MOSFET

    IEEE Transactions on Electron Devices, Vol. 44, Núm. 5, pp. 841-846

  2. Monte Carlo study on electron transport properties in double-gate fully depleted SOI-MOSFETs

    European Solid-State Device Research Conference

  3. Study of the effects of a stepped doping profile in short-channel mosfet's

    IEEE Transactions on Electron Devices, Vol. 44, Núm. 9, pp. 1425-1431